PART |
Description |
Maker |
K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7N803645A K7N801845A |
256Kx36-Bit Pipelined NtRAMData Sheet 512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7A803600A-16 K7A801800A K7A801800A-10 K7A801800A- |
512Kx18-Bit Synchronous Burst SRAM Data Sheet 256Kx36Bit Synchronous Burst SRAM Data Sheet 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7M801825B K7M803625B DSK7M803625B K7M801825B-QC65 |
COMPUTER PRODUCT 256Kx36 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 Connector assemblies, Audio/RF/Video cables; DELUX AUDIO RIGHT ANGLE CABLE 256Kx36 & 512Kx18-Bit Flow Through NtRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
IDT709149S 709149_DS_24983 IDT709149S8PF IDT709149 |
4K x 9 Sync, Dual-Port RAM, Pipelined HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM From old datasheet system
|
IDT[Integrated Device Technology]
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
K7P801811M-H20 K7P801811M-H21 K7P801811M-H25 K7P80 |
256Kx36 & 512Kx18 SRAM 256Kx36 & 512Kx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
UPD4481182GF-A44 UPD4481182GF-A50 UPD4481182GF-A60 |
8M-BIT ZEROSB SRAM PIPELINED OPERATION 800万位ZEROSB SRAM的流水线操作 8M-BIT ZEROSB SRAM PIPELINED OPERATION
|
NEC, Corp. NEC Corp.
|
K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
DSK7A803600B K7A803600B K7A801800B DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|